The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Feb. 08, 2017
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Inventor:
Yoshiki Kamata, Tokyo, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 29/15 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 29/155 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01);
Abstract
According to one embodiment, a memory includes a resistance change layer includes a first chalcogenide layer, and a second chalcogenide layer having a composition different from that of the first chalcogenide layer which are stacked alternately, and the resistance change layer having a superlattice structure, and a semiconductor layer of a first conductivity type provided on a one of main surfaces of the resistance change layer.