The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Feb. 22, 2016
Applicant:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Inventor:
Takeshi Kamino, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14689 (2013.01); H01L 27/14612 (2013.01); H01L 27/14614 (2013.01); H01L 27/14627 (2013.01); H01L 27/14643 (2013.01); H01L 27/14687 (2013.01);
Abstract
The performances of a semiconductor device are improved. A semiconductor device has a photodiode and a transfer transistor formed in a pixel region. Further, the semiconductor device has a second transistor formed in a peripheral circuit region. The transfer transistor includes a first gate electrode, and a film part formed of a thick hard mask film formed over the first gate electrode. The second transistor includes a second gate electrode, source/drain regions, silicide layers formed at the upper surface of the second gate electrode, and the upper surfaces of the source/drain regions.