The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
May. 27, 2015
Canon Kabushiki Kaisha, Tokyo, JP;
Yusuke Onuki, Fujisawa, JP;
Masatsugu Itahashi, Yokohama, JP;
Nobuaki Kakinuma, Tokyo, JP;
Mineo Shimotsusa, Machida, JP;
Masato Fujita, Kitakyushu, JP;
Takumi Ogino, Koganei, JP;
Keita Torii, Yamato, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A method of manufacturing a solid-state image sensor including preparing a wafer including a pixel region where a photoelectric conversion element is provided, a peripheral circuit region where a gate electrode of a peripheral MOS transistor for constituting a peripheral circuit is provided, and a scribe region. The method includes forming an insulating film covering the pixel region, the peripheral circuit region, and the scribe region, and forming a sidewall spacer on a side surface of the gate electrode by etching the insulating film so that portions of the insulating film remains to cover the pixel region and the scribe region, and forming a metal silicide layer in the peripheral circuit region by using, as a mask for protection from silicidation, the insulating film covering the pixel region and the scribe region.