The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
May. 24, 2017
Jeong Gil Lee, Hwaseong-si, KR;
Jee Yong Kim, Hwaseong-si, KR;
Jung Hwan Lee, Seoul, KR;
Dae Seok Byeon, Seongnam-si, KR;
Hyun Seok Lim, Suwon-si, KR;
Jeong Gil Lee, Hwaseong-si, KR;
Jee Yong Kim, Hwaseong-si, KR;
Jung Hwan Lee, Seoul, KR;
Dae Seok Byeon, Seongnam-si, KR;
Hyun Seok Lim, Suwon-si, KR;
Abstract
A memory device may include a gate structure including a plurality of gate electrode layers and a plurality of insulating layers alternately stacked on a substrate, a plurality of etching stop layers, extending from the insulating layers respectively, being on respective lower portions of the gate electrode layers; and a plurality of contacts connected to the gate electrode layers above upper portions of the etching stop layers, respectively, wherein respective ones of the etching stop layers include an air gap therein.