The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Jun. 19, 2017
Applicant:
Abb Schweiz Ag, Baden, CH;
Inventors:
Assignee:
ABB Schweiz AG, Baden, CH;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/747 (2006.01); H01L 27/08 (2006.01); H01L 29/74 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0817 (2013.01); H01L 29/7404 (2013.01); H01L 29/747 (2013.01); H01L 29/0692 (2013.01);
Abstract
A bidirectional power semiconductor device with full turn-off control in both current directions and improved electrical and thermal properties is provided, the device comprises a plurality of first gate commutated thyristor (GCT) cells and a plurality of second GCT cells alternating with each other, a first base layer of each first GCT cell is separated from a neighbouring second anode layer of a neighbouring second GCT cell by a first separation region, and a second base layer of each second GCT cell is separated from a neighbouring first anode layer of a neighbouring first GCT cell by a second separation region.