The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Mar. 09, 2016
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Ippei Kume, Oita, JP;
Kazuyuki Higashi, Oita, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 23/31 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 23/481 (2013.01); H01L 23/3128 (2013.01); H01L 23/562 (2013.01); H01L 2224/16145 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18161 (2013.01);
Abstract
A semiconductor device according to the present embodiment includes a semiconductor substrate, an insulating film and a conductive film. The insulating film is disposed on a first surface of the semiconductor substrate. The insulating film covers a semiconductor element. The conductive film penetrates the semiconductor substrate across from the first surface to a second surface opposite to the first surface. On the second surface, a trench continuously or intermittently exists across from a first end part side of the second surface to a second end part side thereof.