The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
May. 30, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Kiseok Lee, Hwaseong-si, KR;
Sooho Shin, Hwaseong-si, KR;
Juik Lee, Anyang-si, KR;
Jun Ho Lee, Hwaseong-si, KR;
Kwangmin Kim, Hwaseong-si, KR;
Ilyoung Moon, Yongin-si, KR;
Jemin Park, Suwon-si, KR;
Bumseok Seo, Yongin-si, KR;
Chan-Sic Yoon, Anyang-si, KR;
Hoin Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A semiconductor device includes an alignment key on a substrate. The alignment key includes a first sub-alignment key pattern with a first conductive pattern, a second conductive pattern, and a capping dielectric pattern that are sequentially stacked on the substrate, an alignment key trench that penetrates at least a portion of the first sub-alignment key pattern, and a lower conductive pattern in the alignment key trench. The alignment key trench includes an upper trench that is provided in the capping dielectric pattern that has a first width, and a lower trench that extends downward from the upper trench and that has a second width less than the first width. The lower conductive pattern includes sidewall conductive patterns that are separately disposed on opposite sidewalls of the lower trench.