The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Sep. 25, 2015
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Zhang Jin, San Diego, CA (US);

Tao Yang, San Diego, CA (US);

Tsai-Pi Hung, San Diego, CA (US);

Mohammad Farazian, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H03H 7/00 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 23/5227 (2013.01); H03H 7/004 (2013.01); H01L 23/5286 (2013.01);
Abstract

Metal-oxide-metal (MOM) type capacitors include a first terminal configured to receive a first voltage, the first terminal being formed on a first dielectric layer; a first set of fingers formed on the first dielectric layer, the first set of fingers being coupled to the first terminal via a conductive trace formed on a second dielectric layer; a second terminal configured to receive second voltage, the second terminal being formed on the first dielectric layer; and a second set of fingers formed on the first dielectric layer, the second set of fingers being coupled to the second terminal, wherein the fingers of the second set are interspersed with the fingers of the first set.


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