The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Jun. 17, 2016
Applicant:

Trumpf Huettinger Gmbh + Co. KG, Freiburg, DE;

Inventors:

Alexander Alt, Freiburg, DE;

Andre Grede, Freiburg, DE;

Daniel Gruner, Muellheim, DE;

Anton Labanc, Ehrenkirchen, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32174 (2013.01); H01J 37/32082 (2013.01); H01L 29/7835 (2013.01); H01L 29/4175 (2013.01);
Abstract

A power supply system includes a power converter configured to generate a high-frequency power signal and be connected to a load to supply a plasma process or gas laser process with power. The power converter includes at least one amplifier stage having first and second amplifier paths each having an amplifier. The first and second amplifier path are connected to a phase-shifting coupler unit that is configured to couple phase-shifted output signals from the first and second amplifier paths to form the high-frequency power signal. At least one amplifier of the first and second amplifier paths includes a field effect transistor implemented in a semiconductor device with a semiconductor structure having a substantially layered construction, and the semiconductor device includes a channel, a current flowing in the channel substantially in parallel with layers of the semiconductor structure.


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