The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Nov. 25, 2014
Applicant:
Hewlett-packard Development Company, L.p., Houston, TX (US);
Inventors:
Assignee:
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); B41J 2/045 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0038 (2013.01); B41J 2/04541 (2013.01); B41J 2/04586 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01);
Abstract
A circuit comprising an input, a ground, a first switch, a second switch and a bi-polar memristor, wherein the first switch is a first transistor and a gate of the first transistor is connected to a line to instruct setting of the bi-polar memristor, and the second switch is a second transistor and a gate of the second transistor is connected to a line to instruct re-setting of the bi-polar memristor.
Chia, Leong. (2018). Bi-polar memristor (U.S. Patent No. 10026476). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10026476
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile