The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Oct. 07, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Hyun-Jun Yoon, Changwon-si, KR;

Jae-Woo Im, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/20 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 7/08 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G11C 7/08 (2013.01); G11C 11/5628 (2013.01); G11C 16/20 (2013.01); G11C 16/3404 (2013.01); G11C 16/0483 (2013.01); G11C 16/32 (2013.01);
Abstract

A non-volatile memory device for selectively performing a recovery operation and a method of operating the same are provided. The method of operating a non-volatile memory device includes receiving a first read command, performing a first sensing operation in response to the first read command, and receiving a second read command. The method further includes completing a memory operation corresponding to the first read command without performing a recovery operation when the second read command is received before the first sensing operation is completed, and performing a second sensing operation in response to the second read command.


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