The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Aug. 05, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Mindy Lee, Sunnyvale, CA (US);

Jung H. Woo, Beaverton, OR (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 1/70 (2012.01);
U.S. Cl.
CPC ...
G03F 1/70 (2013.01); G06F 17/5072 (2013.01); G06F 17/5081 (2013.01);
Abstract

A method of making a photomask includes constructing a transmission cross coefficient (TCC) matrix representing an illumination source for supplying light to transmit through the photomask and a pupil for focusing the transmitted light onto a target substrate to produce a set of main features, generating kernels through decomposition of the TCC matrix, selecting ones of the kernels having odd symmetry, generating a field map kernel as a sum of self-convolutions of the odd symmetry kernels, generating a first field map by convolving an area of the photomask corresponding to the set of main features with the field map kernel, and making the photomask corresponding to the first field map. The method may include assigning first sub-resolution assist features (SRAFs) to those portions of the photomask area having corresponding said first field map values exceeding a nonnegative threshold, and making the photomask corresponding to the main features and first SRAFs.


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