The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Feb. 26, 2016
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventors:
Shinya Watanabe, Oita Oita, JP;
Toshihiro Nambu, Yokohama Kanagawa, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); G01R 31/28 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 27/11529 (2017.01); H01L 23/538 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2856 (2013.01); H01L 21/76898 (2013.01); H01L 22/32 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 23/49816 (2013.01); H01L 23/5384 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/29 (2013.01); H01L 25/0657 (2013.01); H01L 27/11529 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/05012 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05093 (2013.01); H01L 2224/05095 (2013.01); H01L 2224/05096 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05616 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/0601 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/10135 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16113 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/27334 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81139 (2013.01); H01L 2224/81444 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/97 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01404 (2013.01); H01L 2924/1438 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/3511 (2013.01);
Abstract
A through electrode and a multilayer wiring are provided on a semiconductor substrate, and a bottom layer connection wiring, a lower layer connection wiring, an upper layer connection wiring, and a top layer connection wiring are provided in the multilayer wiring. The through electrode is connected to the bottom layer connection wiring, and a via is arranged at a position other than a position immediately above the through electrode.
Watanabe, Shinya. (2018). Semiconductor device and manufacturing method of semiconductor device (U.S. Patent No. 10024907). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10024907
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile