The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Sep. 25, 2013
Applicant:

Seoul Semiconductor Co., Ltd., Ansan-si, KR;

Inventors:

Chan Seob Shin, Ansan-si, KR;

Hyoung Jin Lim, Ansan-si, KR;

Kyoung Wan Kim, Ansan-si, KR;

Yeo Jin Yoon, Ansan-si, KR;

Jacob J Richardson, Ansan-si, KR;

Daniel Estrada, Ansan-si, KR;

Evan C. O'Hara, Ansan-si, KR;

Haoran Shi, Ansan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/42 (2010.01); H01L 33/60 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 33/60 (2013.01); H01L 33/46 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0058 (2013.01);
Abstract

A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.


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