The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Mar. 07, 2017
Applicant:

Samsung Display Co., Ltd., Yongin-Si, Gyeonggi-Do, KR;

Inventors:

Seung Hyun Park, Seoul, KR;

Jun Ho Song, Seongnam-si, KR;

Jean Ho Song, Yongin-si, KR;

Jae Hak Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/36 (2010.01); H01L 29/739 (2006.01); H01L 51/52 (2006.01); H01L 29/786 (2006.01); H01L 27/146 (2006.01); H01L 29/66 (2006.01); G02F 1/133 (2006.01); G02F 1/1333 (2006.01); G02F 1/1337 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); G02F 1/13306 (2013.01); G02F 1/13439 (2013.01); G02F 1/133345 (2013.01); G02F 1/133707 (2013.01); G02F 1/134309 (2013.01); G02F 1/136286 (2013.01); H01L 27/14692 (2013.01); H01L 29/66742 (2013.01); H01L 29/7394 (2013.01); H01L 29/786 (2013.01); H01L 29/78618 (2013.01); H01L 33/36 (2013.01); H01L 51/5203 (2013.01); H01L 51/5209 (2013.01); G02F 2001/134345 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01);
Abstract

A display substrate is provided. The display substrate includes a gate electrode disposed on a base; a gate insulating layer disposed on the base and covering the gate electrode; a semiconductor layer disposed on the gate insulating layer and overlapping the gate electrode; a source electrode and a drain electrode disposed on the semiconductor layer and connected to the semiconductor layer; a pixel electrode disposed on the gate insulating layer, connected to the drain electrode, and extending from the drain electrode; a common electrode insulated from the pixel electrode and overlapping the pixel electrode; and a semiconductor pattern disposed between the gate insulating layer and the pixel electrode, the semiconductor pattern overlapping the pixel electrode. The semiconductor pattern comprises a same material as the semiconductor layer and extends from the semiconductor layer.


Find Patent Forward Citations

Loading…