The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Mar. 03, 2015
Applicant:
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Inventors:
Suk Hoon Ku, Yongin, KR;
Hyunduck Cho, Yongin, KR;
Assignee:
Samsung Display Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78609 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/66757 (2013.01); H01L 29/78618 (2013.01);
Abstract
Provided are a thin film transistor (TFT) and a method of manufacturing the TFT. The TFT includes a substrate; a first conductive type semiconductor layer on the substrate and having a recess; second conductive type spacers at opposite side walls in the recess; a main semiconductor layer covering the first conductive type semiconductor layer and the second conductive type spacers and comprising a channel region and source and drain regions; a gate insulating layer on the main semiconductor layer; and a gate electrode on the gate insulating layer and corresponding to the recess.