The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Sep. 20, 2016
Applicant:
Nuvoton Technology Corporation, Hsinchu, TW;
Inventors:
Assignee:
Nuvoton Technology Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7819 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/8618 (2013.01);
Abstract
Provided are a diode, a junction field effect transistor (JFET), and a semiconductor device that have a top doped region. A dopant concentration gradient of the top doped region at one side is different from the dopant concentration gradient of the top doped region at an opposite side. The top doped region is able to increase a breakdown voltage of the device and decrease an on-state resistance (Ron) of the device.