The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Aug. 30, 2016
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Masanobu Tsuchitani, Kanazawa Ishikawa, JP;

Hideki Okumura, Nonoichi Ishikawa, JP;

Sadayuki Jimbo, Kanazawa Ishikawa, JP;

Takuya Yamaguchi, Nomi Ishikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0661 (2013.01); H01L 29/861 (2013.01);
Abstract

A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the second conductivity type, and an insulating portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating portion is located in a vicinity of, and contacts, the second semiconductor region and the third semiconductor region, and the insulating portion includes a plurality of voids therein, the plurality of voids extending around the second semiconductor region.


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