The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Jul. 14, 2016
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-Do, KR;
Yung-Bin Chung, Seoul, KR;
Bo-Geon Jeon, Hwaseong-si, KR;
Eun-Jeong Cho, Busan, KR;
Hye-Hyang Park, Yongin-si, KR;
Sung-Hoon Yang, Seoul, KR;
Woo-Seok Jeon, Seoul, KR;
Joo-Hee Jeon, Anyang-si, KR;
Chaun-Gi Choi, Suwon-si, KR;
Samsung Display Co., Ltd., , KR;
Abstract
A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.