The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Mar. 08, 2017
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventor:
Hideomi Kumano, Tokyo, JP;
Assignee:
CANON KABUSHIKI KAISHA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/1462 (2013.01); H01L 27/1464 (2013.01); H01L 27/14607 (2013.01); H01L 27/14625 (2013.01); H01L 27/14685 (2013.01); H01L 27/14627 (2013.01);
Abstract
Provided is a photoelectric conversion device including: a semiconductor substrate having a photoelectric conversion unit; a first conductive layer formed over the semiconductor substrate; a first diffusion prevention layer formed over the first conductive layer; and a light guide that guides an incident light into the photoelectric conversion unit, in which the first diffusion prevention layer contains hydrogen atoms and carbon atoms, and a composition ratio of the hydrogen atoms is greater than or equal to 46 at % and less than or equal to 50 at %.