The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

May. 05, 2017
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Takuji Matsumoto, Kanagawa, JP;

Keiji Tatani, Kanagawa, JP;

Yasushi Tateshita, Kanagawa, JP;

Kazuichiro Itonaga, Tokyo, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/146 (2006.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/14621 (2013.01); H01L 27/14625 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H04N 5/378 (2013.01);
Abstract

A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.


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