The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Apr. 28, 2017
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Kazunobu Kuwazawa, Sakata, JP;

Noriyuki Nakamura, Sakata, JP;

Mitsuo Sekisawa, Sakata, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/14643 (2013.01);
Abstract

In this solid-state imaging device, the sameness of the potential distributions in pixels, in a region from a photodiode of a transfer transistor to a floating diffusion in a charge transfer path, is improved. The solid-state imaging device includes a first transfer transistor including a first photodiode, a first gate electrode, and a first floating diffusion, a second transfer transistor including a second photodiode, a second gate electrode, and a second floating diffusion, a third transfer transistor including a third photodiode, a third gate electrode, and a third floating diffusion, and a reset transistor including a diffusion layer, which is a source or drain region, and a reset gate. The first to third floating diffusions and the diffusion layer of the reset transistor are separated from each other, and are electrically connected to each other via an interconnect. The first to third photodiodes are arrayed one-dimensionally.


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