The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Jun. 07, 2016
Applicant:

Eastman Kodak Company, Rochester, NY (US);

Inventor:

Carolyn Rae Ellinger, Rochester, NY (US);

Assignee:

EASTMAN KODAK COMPANY, Rochester, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1262 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02642 (2013.01); H01L 21/32 (2013.01); H01L 27/127 (2013.01); H01L 27/1218 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract

A method device is prepared with a patterned thin film that can include one or more metal oxides on a suitable substrate. Initially, a pattern of a deposition inhibitor is provided on a surface of the substrate, which deposition inhibitor comprises at least one cellulose ester. This pattern has both inhibitor areas where the deposition inhibitor is present and open areas where the deposition inhibitor is absent. An inorganic thin film is then deposited on the surface of the substrate by a chemical vapor deposition process only in the open areas of the pattern. Further operations can be carried out including deposit of a second inorganic thin film exactly over the initial inorganic thin film, the deposition inhibitor can be removed from the inhibitor areas of the pattern, or both operations can be carried out in sequence.


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