The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Aug. 10, 2016
Toshiba Memory Corporation, Tokyo, JP;
Yasuyuki Baba, Ayase Kanagawa, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A semiconductor memory device includes a plurality of wiring layers formed on a substrate, one or more first pillars penetrating through the wiring layers on a memory region of the substrate and in contact with the substrate, a plurality of memory transistors being formed at portions of each of the one or more first pillars that penetrate the wiring layers, and one or more second pillars penetrating through at least one of the wiring layers on a peripheral region of the substrate and in contact with the substrate. Each of the first and second pillars includes a semiconductor portion, a first insulating layer formed around the semiconductor portion, a charge accumulation layer formed around the first insulating layer, and a second insulating layer formed around the charge accumulation layer.