The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Mar. 24, 2016
Applicant:
Nxp B.v., Eindhoven, NL;
Inventor:
Da-Wei Lai, Nijmegen, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/08 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H03K 17/081 (2006.01); H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 27/0255 (2013.01); H01L 29/0619 (2013.01); H01L 29/7436 (2013.01); H03K 17/08108 (2013.01);
Abstract
A silicon controlled rectifier (SCR) circuit is configured to shunt electrostatic discharge (ESD) current from a node to a reference voltage. The SCR circuit includes a first bipolar PNP transistor having a first emitter connected to the node, a first base, and a first collector. A second bipolar NPN transistor has a second collector sharing a first region with the first base, a second base sharing a second region with the first collector, and an emitter electrically connected to the reference voltage. A guard region is configured and arranged to delay triggering of the SCR circuit in response to an ESD event by impeding current flow in the second region.