The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Sep. 29, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Helmut Brech, Lappersdorf, DE;
Albert Birner, Regensburg, DE;
Matthias Zigldrum, Regensburg, DE;
Michaela Braun, Regensburg, DE;
Jan Ropohl, Regensburg, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 29/78 (2006.01); H01L 23/48 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01); H03F 3/193 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 28/10 (2013.01); H01L 28/20 (2013.01); H01L 28/40 (2013.01); H01L 29/7816 (2013.01); H03F 3/193 (2013.01); H03F 3/21 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6655 (2013.01); H01L 2223/6683 (2013.01); H03F 2200/222 (2013.01); H03F 2200/411 (2013.01);
Abstract
In an embodiment, a semiconductor device includes a semiconductor substrate including a front surface, an LDMOS transistor structure in the front surface, a conductive interconnection structure arranged on the front surface, and at least one cavity arranged in the front surface.