The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Nov. 08, 2016
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Koichiro Hori, Tokyo, JP;
Koichiro Nishizawa, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/30604 (2013.01); H01L 21/32134 (2013.01); H01L 21/76898 (2013.01);
Abstract
A semiconductor device includes: a semiconductor substrate through which a via hole is formed from a back surface to a front surface of the semiconductor substrate; an electrode provided on the front surface of the semiconductor substrate and closing the via hole; and a metal film provided on the back surface of the semiconductor substrate, a side wall of the via hole and a lower surface of the electrode, wherein an opening is provided in the metal film on the back surface of the semiconductor substrate, and the opening abuts on only part of a circumference of the via hole.