The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Mar. 02, 2016
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Tae-Kyun Kim, Gyeonggi-do, KR;

Jae-Il Kim, Gyeonggi-do, KR;

Hee-Seong Kim, Gyeonggi-do, KR;

Jun-Gi Choi, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G11C 29/50 (2006.01); G11C 11/406 (2006.01); G11C 11/408 (2006.01); G11C 29/04 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50016 (2013.01); G11C 11/408 (2013.01); G11C 11/4087 (2013.01); G11C 11/40611 (2013.01); G11C 2029/0409 (2013.01); G11C 2029/4402 (2013.01); G11C 2211/4061 (2013.01); G11C 2211/4062 (2013.01);
Abstract

A memory device may include: a plurality of memory cells; at least one address storage unit; a fail detection unit suitable for comparing first and second read data that are read from at least one memory cell selected among the plurality of memory cells to detect a fail, and storing an address of the selected memory cell in the address storage unit when the fail is detected; and a refresh control unit suitable for refreshing the memory cell corresponding to the address stored in the address storage unit at a higher frequency than the other memory cells.


Find Patent Forward Citations

Loading…