The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Oct. 26, 2017
Beihang University, Beijing, CN;
Weisheng Zhao, Beijing, CN;
Zhaohao Wang, Beijing, CN;
Mengxing Wang, Beijing, CN;
Lei Zhang, Beijing, CN;
BEIHANG UNIVERSITY, BeiJing, CN;
Abstract
A high-density magnetic memory device includes: a heavy metal strip or an antiferromagnet strip with a thickness of 0-20 nm, and a plurality of magnetic tunnel junctions manufactured thereon, wherein each of the magnetic tunnel junctions represents a memory bit, which from bottom to top comprises a first ferromagnetic metal with a thickness of 0-3 nm, an oxide with a thickness of 0-2 nm, a second ferromagnetic metal with a thickness of 0-3 nm, a synthetic antiferromagnetic layer with a thickness of 10-20 nm and a No. X top electrode with a thickness of 10-200 nm, wherein an X value is a serial number of the memory bit; two ends of the heavy metal strip or the antiferromagnet strip are respectively plated with a first bottom electrode and a second bottom electrode. The write operation for the memory device of the present invention is accomplished by applying unidirectional write currents.