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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10018915 B1

PDFFull Text
Date of Patent:
Jul. 10, 2018

Filed:

Jul. 12, 2016

Pattern forming method

Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Kazuto Matsuki, Ota Tokyo, JP;

Ryoichi Suzuki, Yokohama Kanagawa, JP;

Shinichi Ito, Yokohama Kanagawa, JP;

Seiji Morita, Shinagawa Tokyo, JP;

Assignee:

Toshiba Memory Corporation, Tokyo, JP;

Attorney:

Patterson & Sheridan, LLP

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/40 (2006.01); G03F 7/16 (2006.01); H01L 21/3105 (2006.01); B82Y 40/00 (2011.01); B81C 1/00 (2006.01); H01L 21/308 (2006.01); B82Y 10/00 (2011.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/168 (2013.01); B81C 1/00031 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/002 (2013.01); G03F 7/40 (2013.01); H01L 21/0271 (2013.01); H01L 21/3086 (2013.01); H01L 21/31058 (2013.01); H01L 21/31144 (2013.01); B81C 2201/0149 (2013.01);
Abstract

A pattern forming method includes forming a guide pattern on a substrate including first and second regions and applying a directed self-assembly material including a first and a second polymer portion to the substrate. The first region is irradiated with an energy beam. The substrate is subjected to a heating process after irradiation and the directed self-assembly material in the second region separates into a first polymer phase and a second polymer phase. The directed self-assembly material is removed from the first region after irradiation.

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