The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Oct. 09, 2015
Applicant:

Semilab Semiconductor Physics Laboratory Co., Ltd., Budapest, HU;

Inventors:

Zoltan Tamas Kiss, Budapest, HU;

Laszlo Dudas, Pécel, HU;

Gyorgy Nadudvari, Pilisszentivan, HU;

Nicolas Laurent, Singapore, SG;

Lubomir L. Jastrzebski, Clearwater, FL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/64 (2006.01); G01N 21/95 (2006.01);
U.S. Cl.
CPC ...
G01N 21/6489 (2013.01); G01N 21/9501 (2013.01); G01N 2021/646 (2013.01);
Abstract

A method that includes: illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer; filtering photoluminescence emitted from a portion of the wafer in response to the illumination; directing the filtered photoluminescence onto a detector to image the portion of the wafer on the detector with a spatial resolution of 1 μm×1 μm or smaller; and identifying one or more crystallographic defects in the wafer based on the detected filtered photoluminescence.


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