The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Jan. 29, 2013
Epiluvac Ab, Lund, SE;
Erik Janzén, Linköping, SE;
Olof Kordina, Vikingstad, SE;
EPILUVAC AB, Lund, SE;
Abstract
A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber heated to a temperature between 1600° C. and 2000° C. Process gases enter the reaction chamber utilizing at least a primary gas flow, a secondary gas flow, and a shower gas flow. The shower gas flow is fed substantially perpendicularly to the primary and secondary gas flows and is directed towards the substrate. The primary and secondary gas flows are oriented substantially parallel to the surface of the substrate. A silicon precursor gas is entered by the primary gas flow. A hydrocarbon precursor gas is entered in at least one of the primary gas flow, the secondary gas flow, or the shower gas flow. Hydrogen is entered primarily in the secondary flow and the shower head flow. A CVD reactor chamber for use in processing the method.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile