The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Nov. 30, 2012
Youtec Co., Ltd., Chiba, JP;
Sae Magnetics (H.k.) Ltd., Hong Kong, CN;
Takeshi Kijima, Chiba, JP;
Yuuji Honda, Chiba, JP;
Daisuke Iitsuka, Hong Kong, CN;
Kenjirou Hata, Hong Kong, CN;
YOUTEC CO., LTD., Chiba, JP;
SAE MAGNETICS (H.K.) LTD., Shatin, N.T., HK;
Abstract
There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.