The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Jan. 19, 2015
Applicant:
Hanwha Chemical Corporation, Seoul, KR;
Inventors:
Sang ah Kim, Incheon, KR;
Jea Sung Park, Daejeon, KR;
Won Ik Lee, Bucheon-si, KR;
Gil Ho Kim, Daejeon, KR;
Bo Kyung Kim, Daejeon, KR;
Gui Ryong Ahn, Daejeon, KR;
Assignee:
HANWHA CHEMICAL CORPORATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 53/86 (2006.01); C01B 3/50 (2006.01); C23C 16/24 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
B01D 53/8659 (2013.01); C01B 3/50 (2013.01); C23C 16/24 (2013.01); C23C 16/4412 (2013.01); B01D 2257/2045 (2013.01); B01D 2258/0216 (2013.01); C01B 2203/0465 (2013.01);
Abstract
The present invention relates to a purification method and a purification apparatus for off-gas. More specifically, the present invention relates to a purification method and a purification apparatus for off-gas, capable of lowering the concentration of hydrogen chloride and separating high-purity hydrogen from the off-gas, which is discharged after performing a polysilicon deposition process by a chemical vapor deposition reaction.