The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2018

Filed:

Jun. 16, 2017
Applicant:

Truelight Corporation, Hsinchu, TW;

Inventors:

Chien Hung Pan, Hsinchu, TW;

Cheng-Ju Wu, Hsinchu, TW;

Assignee:

TrueLight Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/20 (2006.01); H01S 5/32 (2006.01); H01S 5/323 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2027 (2013.01); H01S 5/2018 (2013.01); H01S 5/2031 (2013.01); H01S 5/3211 (2013.01); H01S 5/3213 (2013.01); H01S 5/3219 (2013.01); H01S 5/3235 (2013.01); H01S 5/34306 (2013.01); H01S 2301/18 (2013.01);
Abstract

An edge-emitting laser having a small vertical emitting angle includes an upper cladding layer, a lower cladding layer and an active region layer sandwiched between the upper and lower cladding layers. By embedding a passive waveguide layer within the lower cladding layer, an extended lower cladding layer is formed between the passive waveguide layer and the active region layer. In addition, the refractive index (referred as n-value) of the passive waveguide layer is larger than the n-value of the extended lower cladding layer. The passive waveguide layer with a larger n-value would guide the light field to extend downward. The extended lower cladding layer can separate the passive waveguide layer and the active region layer and thus expand the near-field distribution of laser light field in the resonant cavity, so as to obtain a smaller vertical emitting angle in the far-field laser light field.


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