The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2018

Filed:

Dec. 01, 2015
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Yasuaki Matsushita, Kanagawa, JP;

Tokihiko Matsumura, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); C07F 9/145 (2006.01); C08L 33/14 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/004 (2013.01); C07F 9/145 (2013.01); C08L 33/14 (2013.01); H01L 51/0034 (2013.01); H01L 51/052 (2013.01); H01L 51/0545 (2013.01);
Abstract

The present invention provides a composition for forming a gate insulating film, which improves the insulation reliability of an organic thin film transistor without greatly reducing the mobility of the organic thin film transistor, an organic thin film transistor, electronic paper, and a display device. The composition for forming a gate insulating film of the present invention contains an insulating material and a migration inhibitor selected from the group consisting of a compound represented by any of Formulae (1) to (8), a polymer compound (X) containing a repeating unit represented by Formula (A), and a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C).


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