The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2018

Filed:

Jan. 13, 2017
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Jar-Yu Wu, Hsinchu, TW;

Chun-Lung Tseng, Hsinchu, TW;

Ching-Hsing Shen, Hsinchu, TW;

Wei-Ting Cheng, Hsinchu, TW;

Jui-Fen Chien, Hsinchu, TW;

Yu-Ming Kung, Hsinchu, TW;

Chiao-Yao Cheng, Hsinchu, TW;

Assignee:

EPISTAR Corporation, Hsinchu, Taiwan, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 33/58 (2010.01); H01L 33/40 (2010.01); H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 27/15 (2006.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/0095 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/58 (2013.01); H01L 27/156 (2013.01); H01L 33/20 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A manufacturing method of a light-emitting device is disclosed. The method includes: providing a semiconductor wafer, including a substrate having a first surface and a second surface opposite to the first surface; and a semiconductor stack on the first surface; removing a portion of the semiconductor stack to form an exposed region; forming a first reflective structure on the exposed region; and providing a radiation on the second surface corresponding to a position of the first reflective structure.


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