The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2018

Filed:

Dec. 22, 2014
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Shih-I Chen, Hsinchu, TW;

Wei-Yu Chen, Hsinchu, TW;

Yi-Ming Chen, Hsinchu, TW;

Ching-Pei Lin, Hsinchu, TW;

Tsung-Xian Lee, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 33/382 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.


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