The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Jan. 09, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/51 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 27/088 (2013.01); H01L 29/0869 (2013.01); H01L 29/0886 (2013.01); H01L 29/1045 (2013.01); H01L 29/1054 (2013.01); H01L 29/1095 (2013.01); H01L 29/161 (2013.01); H01L 29/66636 (2013.01); H01L 29/66659 (2013.01); H01L 29/7833 (2013.01); H01L 29/7835 (2013.01); H01L 21/823462 (2013.01); H01L 29/0653 (2013.01); H01L 29/165 (2013.01); H01L 29/513 (2013.01);
Abstract
Provided are a semiconductor device and a method of forming the same. The semiconductor device includes an active region defined by an isolation layer. A source region portion, a drain region portion and a channel region are located in the active region. The channel region includes a first portion located close to the source region portion and a second portion having a higher threshold voltage than the first portion.