The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2018

Filed:

Jan. 24, 2017
Applicant:

Electronics and Telecommunications Research Institute, Daejeon, KR;

Inventors:

Jeho Na, Daejeon, KR;

Hyung Seok Lee, Daejeon, KR;

Chi Hoon Jun, Daejeon, KR;

Sang Choon Ko, Daejeon, KR;

Myungjoon Kwack, Gimpo-si, KR;

Young Rak Park, Daejeon, KR;

Woojin Chang, Daejeon, KR;

Hyun-Gyu Jang, Cheongju-si, KR;

Dong Yun Jung, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 23/31 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 23/3171 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/41758 (2013.01); H01L 29/42364 (2013.01); H01L 29/42372 (2013.01); H01L 29/66462 (2013.01);
Abstract

A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.


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