The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Feb. 03, 2017
Powdec K.k., Oyama-shi, Tochigi, JP;
Hiroji Kawai, Oyama, JP;
Powdec K.K., Oyama-shi, Tochigi, JP;
Abstract
This hetero-junction bipolar transistor includes a first n-type GaN layer, an AlGaN layer (0.1≤x≤0.5), an undoped GaN layer having a thickness of not less than 20 nm, a Mg-doped p-type GaN layer having a thickness of not less than 100 nm, and a second n-type GaN layer which are sequentially stacked. The first n-type GaN layer and the AlGaN layer form an emitter, the undoped GaN layer and the p-type GaN layer form a base, and the second n-type GaN layer forms a collector. During non-operation, two-dimensional hole gas is formed in a part of the undoped GaN layer near the hetero interface between the AlGaN layer and the undoped GaN layer. When the thickness of the p-type GaN layer is b [nm], the hole concentration of the p-type GaN layer is p [cm], and the concentration of the two-dimensional hole gas is P[cm], p×b×10+P≥1×10[cm] is satisfied.