The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Apr. 24, 2017
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Johannes Donkers, Valkenswaard, NL;
Viet Thanh Dinh, Leuven, BE;
Tony Vanhoucke, Bierbeek, BE;
Evelyne Gridelet, Omal, BE;
Anco Heringa, Waalre, NL;
Dirk Klaassen, Eindhoven, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/737 (2013.01); H01L 29/0649 (2013.01); H01L 29/407 (2013.01); H01L 29/66242 (2013.01);
Abstract
The disclosure relates to bipolar transistor devices and a method of fabricating the same. The device comprises a field plate, in an isolation region adjacent to a base-collector junction of said active region. The isolation region comprises a gate terminal arranged to be biased independently of a collector, base or emitter terminal of said transistor.
Donkers, Johannes. (2018). Bipolar transistor device and method of fabrication (U.S. Patent No. 10014398). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10014398
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile