logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10014368 B1

PDFFull Text
Date of Patent:
Jul. 03, 2018

Filed:

Nov. 19, 2014

Semiconductor device and manufacturing method of semiconductor device

Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Inventors:

Shinya Iwasaki, Toyota, JP;

Satoru Kameyama, Toyota, JP;

Assignee:

TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;

Attorney:

Oliff PLC

Primary Examiner:

Shaun Campbell

Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 29/06 (2006.01); H01L 21/263 (2006.01); H01L 29/32 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/322 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 29/10 (2006.01); H01L 29/861 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/263 (2013.01); H01L 21/265 (2013.01); H01L 21/26506 (2013.01); H01L 21/28 (2013.01); H01L 21/322 (2013.01); H01L 21/324 (2013.01); H01L 21/3223 (2013.01); H01L 27/0664 (2013.01); H01L 27/0727 (2013.01); H01L 29/0696 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/4236 (2013.01); H01L 29/6609 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/861 (2013.01);
Abstract

An IGBT region includes a collector layer, a first drift layer, a first body layer, an emitter layer, and a trench gate reaching the first drift layer through the first body layer from a front surface side of a semiconductor substrate. A diode region includes a cathode layer, a second drift layer, and a second body layer. A lifetime control region which includes a peak of a crystal defect density is provided in the first drift layer and the second drift layer that are located between a depth of a lower end of the trench gate and surfaces of the first drift layer and the second drift layer. A silicon nitride film is further provided above the trench gate on the front surface side of the semiconductor substrate.

Find Patent Forward Citations

Loading…