The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Jan. 10, 2017
Mie Fujitsu Semiconductor Limited, Kuwana-shi, Mie, JP;
Taiji Ema, Inabe, JP;
Nobuhiro Misawa, Kuwana, JP;
Kazuyuki Kumeno, Kuwana, JP;
Makoto Yasuda, Kuwana, JP;
MIE FUJITSU SEMICONDUCTOR LIMITED, Kuwana, JP;
Abstract
A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration C. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration Clower than the concentration C. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration C. A sign of a TCR of the second polycrystalline silicon changes at the concentration C.