The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Jul. 25, 2017
Applicant:
Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;
Inventor:
Kazuhiro Tsumura, Chiba, JP;
Assignee:
ABLIC Inc., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/34 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0251 (2013.01); H01L 23/34 (2013.01); H01L 27/088 (2013.01); H01L 29/7835 (2013.01);
Abstract
A semiconductor device includes a power element and a heat sensing element configured to detect a temperature of the power element. The power element includes lateral MOS transistors having drains and gate electrodes, two of the drains being shorter in length than the remaining drains and two of the gate electrodes being shorter in length than the remaining gate electrodes. The heat sensing element has a rectangular shape and is disposed between the two shorter drains and the two shorter gate electrodes to accurately detect the temperature of the power element.