The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Jul. 26, 2016
Raytheon Company, Waltham, MA (US);
Fikret Altunkilic, North Andover, MA (US);
Adrian D. Williams, Methuen, MA (US);
Christopher J. MacDonald, Medford, MA (US);
Kamal Tabatabaie Alavi, Sharon, MA (US);
Raytheon Company, Waltham, MA (US);
Abstract
A method and structure, the structure having a substrate, an active device in an active device semiconductor region; of the substrate, a microwave transmission line, on the substrate, electrically connected to the active device, and microwave energy absorbing 'dummy' fill elements on the substrate. The method includes providing a structure having a substrate, an active device region on a surface of the structure, an ohmic contact material on the active device region, and a plurality of 'dummy' fill elements on the surface to provide uniform heating of the substrate during a rapid thermal anneal process, the ohmic contact material and the “dummy” fill elements having the same radiant energy reflectivity. The rapid thermal anneal processing forms an ohmic contact between an ohmic contact material and the active device region and simultaneously converts the “dummy” fill elements into microwave lossy “dummy” fill elements.