The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Aug. 31, 2015
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Renesas Electronics Corporation, Koutou-ku, JP;
Shunsuke Yamada, Osaka, JP;
So Tanaka, Osaka, JP;
Daisuke Hamajima, Osaka, JP;
Shinji Kimura, Hitachinaka, JP;
Masayuki Kobayashi, Hitachinaka, JP;
Masaki Kijima, Hitachinaka, JP;
Maki Hamada, Hitachinaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
The gate electrode is provided on the gate insulating film. The interlayer insulating film is provided to cover the gate electrode. The interlayer insulating film includes a first insulating film which is in contact with the gate electrode, contains silicon atoms, and contains neither phosphorus atoms nor boron atoms, a second insulating film which is provided on the first insulating film and contains silicon atoms and at least one of phosphorus atoms and boron atoms, and a third insulating film which contains silicon atoms and contains neither phosphorus atoms nor boron atoms. The second insulating film has a first surface which is in contact with the first insulating film, a second surface opposite to the first surface, and a third surface which connects the first surface and the second surface. The third insulating film is in contact with at least one of the second surface and the third surface.