The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Dec. 02, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/26 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/26 (2013.01); H01L 21/56 (2013.01); H01L 21/76898 (2013.01); H01L 22/12 (2013.01); H01L 23/3107 (2013.01); H01L 23/3142 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/562 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/94 (2013.01);
Abstract
The patterning technique used for forming sophisticated metallization systems of semiconductor devices may be monitored and evaluated more efficiently by incorporating at least one via line feature into the die seal. In this manner, high statistical significance may be obtained compared to conventional strategies, in which the respective test structures for evaluating patterning processes may be provided at specific sites in the frame region and/or die region. Moreover, by providing a 'long' via line feature, superior sensitivity for variations of depth of focus may be achieved.