The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Dec. 07, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventors:
Oh-Seong Kwon, Seoul, KR;
Jinhyun Kim, Yongin-si, KR;
Won-Hyung Song, Osan-si, KR;
Jihyun Choi, Daegu, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 12/02 (2006.01); G06F 3/06 (2006.01); G11C 8/18 (2006.01); G11C 5/04 (2006.01); G11C 7/10 (2006.01); G11C 8/12 (2006.01); G11C 11/4076 (2006.01); G11C 11/408 (2006.01); G11C 11/4093 (2006.01);
U.S. Cl.
CPC ...
G06F 12/00 (2013.01); G06F 3/0604 (2013.01); G06F 3/0629 (2013.01); G06F 3/0683 (2013.01); G06F 12/02 (2013.01); G11C 5/04 (2013.01); G11C 7/1057 (2013.01); G11C 8/12 (2013.01); G11C 8/18 (2013.01); G11C 7/1042 (2013.01); G11C 11/408 (2013.01); G11C 11/4076 (2013.01); G11C 11/4093 (2013.01); G11C 2207/2209 (2013.01);
Abstract
A semiconductor memory device includes a first memory area in the semiconductor memory device, and a second memory area in the semiconductor memory device. The second memory area is accessed independently of the first memory area based on a usage selecting signal. The first and second memory areas share command and address lines, and perform a rank interleaving operation based on the usage selecting signal.