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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10012883 B1

PDFFull Text
Date of Patent:
Jul. 03, 2018

Filed:

Feb. 02, 2015

Semiconductor device including a silicon nitride dielectric layer and method for producing same

Applicant:

Sharp Kabushiki Kaisha, Sakai-shi, Osaka, JP;

Inventors:

Yohsuke Kanzaki, Sakai, JP;

Seiji Kaneko, Sakai, JP;

Takao Saitoh, Sakai, JP;

Yutaka Takamaru, Sakai, JP;

Keisuke Ide, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, JP;

Attorney:

Keating & Bennett, LLP

Primary Examiner:

Eric Ward

Int. Cl.
CPC ...
H01L 21/318 (2006.01); G02F 1/1368 (2006.01); H01L 21/02 (2006.01); G02F 1/1362 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); G02F 1/1333 (2006.01); H01L 29/24 (2006.01); G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/133345 (2013.01); G02F 1/136213 (2013.01); G02F 1/136227 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1255 (2013.01); H01L 27/1262 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01); H01L 29/78696 (2013.01); G02F 2001/134372 (2013.01);
Abstract

A semiconductor device (A) includes a substrate (); a TFT (A) supported on the substrate, the TFT including an oxide semiconductor layer (); an organic insulating layer () covering the TFT; a lower layer electrode () on the organic insulating layer; a dielectric layer () on the lower layer electrode; an upper layer electrode on the dielectric layer; and an upper layer electrode () including a portion opposing the lower layer electrode via the dielectric layer. The dielectric layer is a silicon nitride film having a hydrogen content of 5.33×10atoms/cmor less.

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